The unusual suppression of superconducting transition temperature in double-doping 2H-NbSe2
نویسندگان
چکیده
منابع مشابه
Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films.
Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been ...
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C. J. Arguello,1,* S. P. Chockalingam,1,* E. P. Rosenthal,1 L. Zhao,1 C. Gutiérrez,1 J. H. Kang,1 W. C. Chung,1 R. M. Fernandes,1 S. Jia,2 A. J. Millis,1 R. J. Cava,2 and A. N. Pasupathy1 1Department of Physics, Columbia University, New York, New York 10027, USA 2Department of Chemistry, Princeton University, Princeton, New Jersey 08540, USA (Received 1 July 2013; revised manuscript received 4 ...
متن کاملCritical field of 2H-NbSe2 down to 50mK
Critical field of 2H-NbSe2 is determined for the field perpendicular to the conducting planes down to 50 mK, by magnetoresistance measurements. It is the first time that such a measurement is extended below 1 K. Variations are almost linear down to 1 K, with a little upward curvature, and the slope of H c 2⊥ (T) decreases below 1 K. The reduced critical field extrapolates to 0.9 when the temper...
متن کاملOptical properties of the quasi-two-dimensional dichalcogenides 2H-TaSe2 and 2H-NbSe2
We present a comprehensive analysis of the optical constants of the two-dimensional dichalcogenide materials 2H-TaSe2 and 2H-NbSe2, in an attempt to address the physics of two-dimensional correlated systems. The title compounds were studied over several decades in frequency, from the far-infrared to the ultraviolet. Measurements with linearly polarized light have allowed us to obtain both the i...
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ژورنال
عنوان ژورنال: Superconductor Science and Technology
سال: 2019
ISSN: 0953-2048,1361-6668
DOI: 10.1088/1361-6668/ab169d